Product Summary
The IKW40T120 is an IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode.
Parametrics
IKW40T120 absolute maximum ratings: (1)Collector-emitter voltage:1200V; (2)DC collector current:TC = 25℃:75A, TC = 100℃:40A; (3)Pulsed collector current, tp limited by Tjmax:105A; (4)Turn off safe operating area VCE ≤ 1200V, Tj≤ 150℃:105A; (5)Diode forward current:TC = 25℃:80A, TC = 100℃:40A; (6)Diode pulsed current, tp limited by Tjmax IFpuls 105A; (7)Gate-emitter voltage:±20V; (8)Short circuit withstand time:10μs; (9)Power dissipation:270W; (10)Operating junction temperature:-40℃ to +150℃; (11)Storage temperature:-55℃ to +150℃; (12)Soldering temperature, 1.6mm (0.063 in.) from case for 10s:260℃.
Features
IKW40T120 features: (1)Best in class TO247; (2)Short circuit withstand time-10μs; (3)Designed for:Frequency Converters, Uninterrupted Power Supply; (4)Trench and Fieldstop technology for 1200 V applications offers:very tight parameter distribution, high ruggedness, temperature stable behavior; (5)NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat); (6)Low EMI; (7)Low Gate Charge; (8)Very soft, fast recovery anti-parallel EmCon HE diode.
Diagrams
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![]() IGBT Transistors LOW LOSS DuoPack 1200V 40A |
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![]() IKW40N120T2 |
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![]() IKW40T120 |
![]() Infineon Technologies |
![]() IGBT Transistors LOW LOSS DuoPack 1200V 40A |
![]() Data Sheet |
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