Product Summary
The MRF464 is a NPN silicon RF power transistor. It is designed primarily for applications as a high-power linear amplifier from 2.0MHz to 30MHz, in single sideband mobile, marine and base station equipment.
Parametrics
MRF464 absolute maximum ratings: (1)collector-emitter voltage:35V; (2)collector-base voltage:65V; (3)emitter-base voltage:4.0V; (4)collector current-continuous:10A; (5)total device dissipation:250W; (6)storage temperature range:-65℃ to +150℃.
Features
MRF464 features: (1)output power = 80W(PEP); (2)minimum gain=15dB; (3)efficiency=40%; (4)intermodulation distortion=-32dB(max).
Diagrams
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MRF464 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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