(China (Mainland))
Product Summary
The FDS8958A is a dual N- and P-Channel enhancement mode power field effect transistor. The FDS8958A is produced using advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. The FDS8958A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
FDS8958A absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current - Continuous): 7A; Pulsed: 20A; (4)PD, Power Dissipation for Dual Operation: 2W; (5)EAS, Single Pulse Avalanche Energy: 54mJ; (6)TJ, TSTG, Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDS8958A features: (1)Q1: N-Channel 7.0A, 30V RDS(on)= 0.028W @ VGS = 10V; RDS(on)= 0.040W @ VGS = 4.5V; (2)Q2: P-Channel -5A, -30V RDS(on)= 0.052W @ VGS = -10V; RDS(on)= 0.080W @ VGS = -4.5V; (3)Fast switching speed; (4)High power and handling capability in a widely used surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FDS8958A |
Fairchild Semiconductor |
MOSFET SO8 COMP N-P-CH T/R |
Data Sheet |
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FDS8958A_F085 |
Fairchild Semiconductor |
MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET |
Data Sheet |
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FDS8958A_NF073 |
Fairchild Semiconductor |
MOSFET DUAL NCH AND PCH POWER TRENCH MOSFET |
Data Sheet |
Negotiable |
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FDS8958A_Q |
Fairchild Semiconductor |
MOSFET SO8 COMP N-P-CH T/R |
Data Sheet |
Negotiable |
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