(China (Mainland))
Product Summary
The MRF1535 is a RF power field effect transistor. It is a N-channel enhancement-mode lateral MOSFET. The MRF1535 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of the MRF1535 makes them ideal for large -signal, common source amplifier applications in 12.5 volt mobile FM equipment.
Parametrics
MRF1535 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +40 Vdc; (2)Gate-Source Voltage VGS: ±20 Vdc; (3)Drain Current . Continuous ID: 6 Adc; (4)Total Device Dissipation @ TC = 25℃ PD: 135W; (5)Derate above 25℃: 0.50W/℃; (6)Storage Temperature Range Tstg: - 65 to +150 ℃; (7)Operating Junction Temperature TJ: 200 ℃.
Features
MRF1535 features: (1)Excellent Thermal Stability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)Broadband-Full Power Across the Band: 135-175 MHz; (4)200℃ Capable Plastic Package; (5)N Suffix Indicates Lead-Free Terminations. RoHS Compliant; (6)In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
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 MRF1535FNT1 |
Freescale Semiconductor |
Transistors RF MOSFET Power RF LDMOS FET TO-272N |
Data Sheet |
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MRF1535NT1 |
Freescale Semiconductor |
Transistors RF MOSFET Power RF LDMOS FET TO-272N |
Data Sheet |
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