Product Summary

The HMC435MS8G is a non-refl ective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with an exposed ground paddle. The switch of the HMC435MS8G is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents.

Parametrics

HMC435MS8G absolute maximum ratings: (1)Control Voltage Range: -0.5 to +7.5 Vdc; (2)Storage Temperature: -65 to +150℃; (3)Operating Temperature: -40 to +85℃; (4)RF Input Power Vctl = 0/+5V: +31 dBm.

Features

HMC435MS8G features: (1)High Isolation: 60 dB @ 1 GHz. 50 dB @ 2 GHz; (2)Positive Control: 0/+5V; (3)51 dBm Input IP3; (4)Non-Refl ective Design; (5)MS8G SMT Package, 14.8 mm2.

Diagrams

HMC435MS8G Functional Diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
HMC435MS8G
HMC435MS8G
Other

Data Sheet
Negotiable 
HMC435MS8GE
HMC435MS8GE

IC SWITCH SPDT 8MSOP
Data Sheet
0-1: $2.30
1-10: $2.06
10-25: $1.85
25-100: $1.68
100-250: $1.52