Product Summary

The IRF7313TRPBF is a HEXFET power MOSFET. Fifth generation HEXFET IRF7313TRPBF from international rectifier utilize advanced processing techniques to achieve ectremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET IRF7313TRPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF7313TRPBF absolute maximum ratings: (1)Drain source voltage, VDS: 30V; (2)Gate source voltage, VGS: ±20V; (3)Continuous drain current, ID: TA=25℃, 6.5A; TA=70℃, 5.2A; (4)Pulsed drain current, IDM: 30A; (5)Power dissipation, PD: TA=25℃, 2.0W; TA=70℃, 1.3W; (6)Single pulse avalanche energy, EAS: 82mJ.

Features

IRF7313TRPBF features: (1)Generation V technology; (2)Ultra low on resistance; (3)Dual N channel MOSFET; (4)Surface mount; (5)Fully avalance rated; (6)Lead free.

Diagrams

IRF7313TRPBF Part Marking Information

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF7313TRPBF
IRF7313TRPBF

International Rectifier

MOSFET MOSFT DUAL NCh 30V 6.5A

Data Sheet

0-1: $0.82
1-25: $0.50
25-100: $0.35
100-250: $0.33
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF710
IRF710

Vishay/Siliconix

MOSFET N-Chan 400V 2.0 Amp

Data Sheet

0-730: $0.79
730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
IRF710, SiHF710
IRF710, SiHF710

Other


Data Sheet

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Data Sheet

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International Rectifier

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Data Sheet

1-570: $0.45
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International Rectifier

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Data Sheet

0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
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International Rectifier

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Data Sheet

1-4000: $0.41