Product Summary
The IRF7319TRPBF is a fifth generation HEXFET from international rectifier utilize advanced prossesing techniques to achieve extremely low on resistance per silicon area. The benefit of the IRF7319TRPBF combined with the fast switching speed and ruggedized device desihn that HEXFET power MOSFET IRF7319TRPBF is well know for, provides the designer with an extremely efficient and reliable device for use in a wide vairiety of applications.
Parametrics
IRF7319TRPBF absolute maximum ratings: (1)Drain source, VDS: 30 to -30V; (2)Pulesed drain current, IDM: 30 to -30A; (3)Source current, IS: 2.5 to -2.5A; (4)Junction and storage temperature range, TJ: -55 to 150℃; (5)Peak diode recovery dv/dt: 5.0 to -5.0 V/ns; (6)Avalanche current, IAR: 4.0 to -2.8A.
Features
IRF7319TRPBF features: (1)Generation V technology; (2)Ultra low on resistance; (3)Dual N and P channel MOSFET; (4)Surface mount; (5)Fully avalanche rated; (6)Lead free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF7319TRPBF |
International Rectifier |
MOSFET MOSFT DUAL N/PCh 30V 6.5A |
Data Sheet |
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Quantity | |||||||||||||
IRF710 |
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IRF710, SiHF710 |
Other |
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Negotiable |
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IRF7101 |
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IRF7101PBF |
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Data Sheet |
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IRF7101TR |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
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